K4M28163PH - R(B)E/G/C/F

March 2006

5

Mobile SDRAM

DC CHARACTERISTICS

°C ~ 85°C for Extended, -25°C ~ 70°C for Commercial)

NOTES:

1. Measured with outputs open.

2. Refresh period is 64ms.

3. Internal TCSR can be supported.

In comercial Temp : 45

°C/Max 70°C. In extended Temp : 45°C/Max 85°C.

4. It has +/-5

°C tolerance.

5. K4M28163PH-S(D)E/C**

6. K4M28163PH-S(D)G/F**

7. DPD(Deep Power Down) function is an optional feature and it will be enabled upon request.

Please contact Samsung for more information.

8. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ).

Parameter

Symbol

Test Condition

Version

Unit

Note

-75

-90

-1L

Operating Current

(One Bank Active)

Burst length = 1

40

35

35

mA

1

Precharge Standby Current in

power-down mode

CKE

0.3

mA

CKE & CLK

0.3

Precharge Standby Current

in non power-down mode

CKE

Input signals are changed one time during 20ns

10

mA

CKE

Input signals are stable

1

Active Standby Current

in power-down mode

CKE

5

mA

CKE & CLK

1

Active Standby Current

in non power-down mode

(One Bank Active)

CKE

Input signals are changed one time during 20ns

20

mA

CKE

Input signals are stable

10

mA

Operating Current

(Burst Mode)

Page burst

4Banks Activated

50

45

45

mA

1

Refresh Current

90

85

85

mA

2

Self Refresh Current

CKE

≤ 0.2V

Internal TCSR

85/70

°C

3

-E/C

Full Array

150

250

uA

5

1/2 of Full

140

210

1/4 of Full

135

190

-G/F

Full Array

100

200

6

1/2 of Full

90

160

1/4 of Full

85

140

Deep Power Down Current

CKE

≤ 0.2V

10

uA

7