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DA9178.001

10 Dec, 2003

PAD LAYOUT

VDD QOP QI QOM AGC

VSS RFM RFP PDN AON

1906 µm

1778 µm

OUT

DEC

9178

A1

DIE size = 1.91 x 1.78 mm; PAD size = 100 x 100

µm except for VSS PAD size 104 x 112 µm

Note: Because the substrate of the die is internally connected to VDD, the die has to be connected to VDD or

left floating. Please make sure that VDD is the first pad to be bonded. Pick-and-place and all component

assembly are recommended to be performed in ESD protected area.

Note: Coordinates are pad center points where origin has been located in the center of VDD pad

Pad Identification

Name

X-coordinate

Y-coordinate

Note

Power Supply Voltage

VDD

0

µm

0

µm

Quartz Filter Output for Crystal

QOP

306

µm

19

µm

Quartz Filter Input for Crystal and

External Compensation Capacitor

QI

549

µm

19

µm

Quartz Filter Output for External

Compensation Capacitor

QOM

866

µm

19

µm

AGC Capacitor

AGC

1146

µm

19

µm

Receiver Output

OUT

1389

µm

19

µm

1

Demodulator Capacitor

DEC

1389

µm

1428

µm

AGC On Control

AON

1146

µm

1428

µm

2

Power Down Input

PDN

829

µm

1428

µm

3

Positive Receiver Input

RFP

586

µm

1428

µm

Negative Receiver Input

RFM

269

µm

1428

µm

Power Supply Ground

VSS

16

µm

1407

µm

Notes:

1) OUT = VSS when carrier amplitude at maximum; OUT = VDD when carrier amplitude is reduced

(modulated)

-

-

at power down the output is pulled to VSS (pull down switch)

2) AON = VSS means AGC off (hold current gain level); AON = VDD means AGC on (working)

-

Internal pull-up with current < 1

µA which is switched off at power down

3) PDN = VSS means receiver on; PDN = VDD means receiver off

-

Fast start-up is triggered when the receiver is after power down (PDN=VDD) controlled to power up

(PDN=VSS) i.e. at the falling edge of PDN signal.