STB270N4F3 datasheet(4/15 Pages) STMICROELECTRONICS

部件名	STB270N4F3

功能描述	N-channel 40V - 2.1m ohm - 160A - TO-220 - D2PAK - I2PAK STripFE TM Power MOSFET

PDF	15 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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Electrical characteristics

STB270N4F3 - STI270N4F3 - STP270N4F3

4/15

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 3.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 250µA, VGS= 0

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = Max rating,

VDS = Max rating

@125°C

100

µA

IGSS

Gate body leakage

current (VDS = 0)

VGS = ±20V

200

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250µA

RDS(on)

Static drain-source on

resistance

VGS= 10V, ID= 80A

TO-220

I²PAK

2.5

2.9

Ω

D²PAK

2.1

2.5

Ω

Table 4.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ. Max.

Unit

gfs

(1)

Pulsed: pulse duration=300µs, duty cycle 1.5%

Forward

transconductance

VDS =15V, ID = 80A

200

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS =25V, f=1 MHz, VGS=0

740

180

Qgs

Qgd

Total gate charge

Gate-source charge

gate-drain charge

VDD=20V, ID = 160A

VGS =10V

(see Figure 13)

110

150

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