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STB270N4F3 数据表(PDF) 5 Page - STMicroelectronics |
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STB270N4F3 数据表(HTML) 5 Page - STMicroelectronics |
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5 / 15 page ![]() STB270N4F3 - STI270N4F3 - STP270N4F3 Electrical characteristics 5/15 Table 5. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr Turn-on delay time Rise time VDD=20 V, ID= 80A, RG=4.7Ω, VGS=10V (see Figure 15) 22 180 ns ns td(off) tf Turn-off delay time Fall time VDD=20 V, ID= 80A, RG=4.7Ω, VGS=10V (see Figure 15) 110 45 ns ns Table 6. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit ISD Source-drain current D²PAK 160 A TO-220 I²PAK 120 A ISDM (1) 1. Pulse width limited by safe operating area Source-drain current (pulsed) D²PAK 640 A TO-220 I²PAK 480 A VSD (2) 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward on voltage ISD=80A, VGS=0 1.5 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD=160A, di/dt = 100A/µs, VDD=32V, Tj=150°C (see Figure 14) 70 225 3.2 ns nC A |
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