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ESM2012DV 数据表(PDF) 1 Page - STMicroelectronics

部件名 ESM2012DV
功能描述  NPN DARLINGTON POWER MODULE
PDF  8 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

ESM2012DV 数据表(HTML) 1 Page - STMicroelectronics

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ESM2012DV
NPN DARLINGTON POWER MODULE
s
HIGH CURRENT POWER BIPOLAR MODULE
s
VERY LOW Rth JUNCTION TO CASE
s
SPECIFIED ACCIDENTAL OVERLOAD
AREAS
s
ULTRAFAST FREEWHEELING DIODE
s
FULLY INSULATED PACKAGE (UL
COMPLIANT)
s
EASY TO MOUNT
s
LOW INTERNAL PARASITIC INDUCTANCE
INDUSTRIAL APPLICATIONS:
s
MOTOR CONTROL
s
UPS
s
DC/DC & DC/AC CONVERTERS
INTERNAL SCHEMATIC DIAGRAM
September 2003
ISOTOP
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VCEV
Collector-Emitter Voltage (VBE = -5 V)
150
V
VCEO(sus) Collector-Emitter Voltage (IB = 0)
120
V
VEBO
Emitter-Base Voltage (IC = 0)
7
V
IC
Collector Current
120
A
ICM
Collector Peak Current (tp = 10 ms)
180
A
IB
Base Current
2
A
IBM
Base Peak Current (tp = 10 ms)
4
A
Ptot
Total Dissipation at Tc = 25
o C
175
W
Visol
Insulation Withstand Voltage (RMS) from All
Four Terminals to Exernal Heatsink
2500
V
Tstg
Storage Temperature
-55 to 150
oC
Tj
Max. Operating Junction Temperature
150
oC
®
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