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ESM2012DV 数据表(PDF) 2 Page - STMicroelectronics

部件名 ESM2012DV
功能描述  NPN DARLINGTON POWER MODULE
PDF  8 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

ESM2012DV 数据表(HTML) 2 Page - STMicroelectronics

  ESM2012DV Datasheet HTML 1Page - STMicroelectronics ESM2012DV Datasheet HTML 2Page - STMicroelectronics ESM2012DV Datasheet HTML 3Page - STMicroelectronics ESM2012DV Datasheet HTML 4Page - STMicroelectronics ESM2012DV Datasheet HTML 5Page - STMicroelectronics ESM2012DV Datasheet HTML 6Page - STMicroelectronics ESM2012DV Datasheet HTML 7Page - STMicroelectronics ESM2012DV Datasheet HTML 8Page - STMicroelectronics  
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THERMAL DATA
Rthj-case
Rthj-case
Rthc-h
Thermal Resistance Junction-case (transistor)
Max
Thermal Resistance Junction-case (diode)
Max
Thermal Resistance Case-heatsink With Conductive
Grease Applied
Max
0.7
0.9
0.05
oC/W
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25
oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICER #
Collector Cut-off
Current (RBE = 5
Ω)
VCE = VCEV
VCE = VCEV
Tj = 100
oC
1.5
10
mA
mA
ICEV #
Collector Cut-off
Current (VBE = -5V)
VCE = VCEV
VCE = VCEV
Tj = 100
oC
1
7
mA
mA
IEBO #
Emitter Cut-off Current
(IC = 0)
VEB = 5 V
1
mA
VCEO(SUS)* Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = 5 A
L = 15 mH
Vclamp = 125 V
125
V
hFE
∗
DC Current Gain
IC = 100 A
VCE = 5 V
1200
VCE(sat)
∗ Collector-Emitter
Saturation Voltage
IC = 70 A
IB = 0.25 A
IC = 70 A
IB = 0.25 A
Tj = 100
oC
IC = 100 A
IB = 1 A
IC = 100 A
IB = 1 A
Tj = 100
o C
1.25
1.35
1.5
1.65
1.5
2
V
V
V
V
VBE(sat)
∗ Base-Emitter
Saturation Voltage
IC = 100 A
IB = 1 A
IC = 100 A
IB = 1 A
Tj = 100
o C
2.3
2.35
3
V
V
diC/dt
Rate of Rise of
On-state Collector
VCC = 90 V
RC = 0
tp = 3
µs
IB1 = 0.5 A
Tj = 100
oC
200
230
A/
µs
VCE(3
µs)••
Collector-Emitter
Dynamic Voltage
VCC = 90 V
RC = 1.3
Ω
IB1 = 0.5 A
Tj = 100
oC
23
V
VCE(5
µs)••
Collector-Emitter
Dynamic Voltage
VCC = 90 V
RC = 1.3
Ω
IB1 = 0.5 A
Tj = 100
oC
1.8
2.5
V
ts
tf
tc
Storage Time
Fall Time
Cross-over Time
IC = 70 A
VCC = 90 V
VBB = -5 V
RBB =
Ω
Vclamp = 125 V
IB1 = 0.25 A
L = 60
µH
Tj = 100
oC
0.9
0.15
0.3
2
0.3
0.6
µs
µs
µs
VCEW
Maximum Collector
Emitter Voltage
Without Snubber
ICWoff = 120 A
IB1 = 1A
VBB = -5 V
VCC = 90 V
L = 60
µH
RBB = 1.25
Ω
Tj = 125
oC
125
V
VF
∗
Diode Forward Voltage
IF = 100 A
Tj = 100
oC
0.92
1
V
IRM
Reverse Recovery
Current
VCC = 125 V
IF = 100 A
diF/dt = -200 A/
µs L < 0.05 µH
Tj = 100
oC
10
14
A
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
# See test circuits in databook introduction
To evaluate the conduction losses of the diode use the following equations:
VF = 0.66 + 0.0034 IF
P = 0.66 IF(AV) + 0.0034 I
2
F(RMS)
ESM2012DV
2/8



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