STB70NF3LL datasheet(3/13 Pages) STMICROELECTRONICS

部件名	STB70NF3LL

功能描述	N-channel 30V - 0.0075ohm - 70A - D2PAK Low gate charge STripFET TM II Power MOSFET

PDF	13 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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3 / 13 page

STB70NF3LL

Electrical ratings

3/13

Electrical ratings

Table 1.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage (VGS = 0)

VDGR

Drain-gate voltage (RGS = 20 kΩ)30

VGS

Gate- source voltage

± 16

(1)

Current limited by the package

Drain current (continuous) at TC = 25°C

Drain current (continuous) at TC = 100°C

IDM

(2)

Pulse width limited by safe operating area

Drain current (pulsed)

280

PTOT

Total dissipation at TC = 25°C

100

Derating factor

0.67

W/°C

dv/dt (3)

ISD ≤70A, di/dt ≤350A/µs, VDD ≤V(BR)DSS, TJ ≤TJMAX

Peak diode recovery voltage slope

5.5

V/ns

EAS

(4)

Starting TJ = 25

oC, I

D = 35A, VDD = 25V

Single pulse avalanche energy

500

Tstg

Storage temperature

-55 to 175

°C

Operating junction temperature

Table 2.

Thermal data

Symbol

Parameter

Value

Unit

RthJC

Thermal resistance junction-case Max

1.5

°C/W

RthJA

Thermal resistance junction-ambient Max

62.5

°C/W

Maximum lead temperature for soldering

purpose

300

°C

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