STB70NF3LL datasheet(4/13 Pages) STMICROELECTRONICS

部件名	STB70NF3LL

功能描述	N-channel 30V - 0.0075ohm - 70A - D2PAK Low gate charge STripFET TM II Power MOSFET

PDF	13 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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Electrical characteristics

STB70NF3LL

4/13

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 3.

On/off states

Symbol

Parameter

Test conditions

Min

Typ

Max

Unit

V(BR)DSS

Drain-source

Breakdown voltage

ID = 250 µA, VGS = 0

IDSS

Zero gate voltage

Drain current (VGS = 0)

VDS = Max rating

TC = 125°C

µA

IGSS

Gate-body leakage

Current (VDS = 0)

VGS = ± 16 V

±100

VGS(th)

Gate threshold voltage

VDS = VGS

ID = 250µA

RDS(on)

Static drain-source on

resistance

VGS = 10V

ID = 35A

VGS = 4.5V

ID = 18A

0.0075

0.010

0.0095

0.012

Ω

Table 4.

Dynamic

Symbol

Parameter

Test conditions

Min

Typ

Max

Unit

gfs

Forward

Transconductance

VDS = 15V

ID =35A

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25V f = 1MHz VGS = 0

1650

540

130

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