STB70NFS03L datasheet(3/13 Pages) STMICROELECTRONICS

3 / 13 page

STB70NFS03L

Electrical ratings

3/13

Electrical ratings

Table 1.

Mosfet absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage (VGS = 0)

VGS

Gate- source voltage

± 18

Drain current (continuous) at TC = 25°C

Drain current (continuous) at TC = 100°C

IDM

(1)

Pulse width limited by safe operating area

Drain current (pulsed)

280

PTOT

Total dissipation at TC = 25°C

100

Derating factor

0.67

W/°C

dv/dt (2)

ISD < 70A, di/dt < 350A/µs, VDD = 80% V(BR)DSS

Peak diode recovery voltage slope

5.5

V/ns

EAS

(3)

Starting Tj = 25°C, VDD = 25V

Single pulse avalanche energy

500

Tstg

Storage temperature

-55 to 175

°C

Operating junction temperature

Table 2.

Schottky absolute maximum ratings

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

IF(RMS) RMS forward current

IF(AV)

Average forward current

TL=125°C

δ=0.5

IFSM

Surge non repetitive forward current

tp=10ms

Sinusoidal

dv/dt

Critical rate of rise of reverse voltage

10000

v/µs

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

Rthj-amb Thermal resistance junction-amb max

1.5

°C/W

Rthj-case Thermal resistance junction-case max

62.5

°C/W

Maximum lead temperature for soldering purpose

300

°C

STB70NFS03L 数据表(PDF) 3 Page - STMicroelectronics

STB70NFS03L 数据表(HTML) 3 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13

数据表下载

链接网址

STB70NFS03L 数据表(PDF) 3 Page - STMicroelectronics

STB70NFS03L 数据表(HTML) 3 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13

数据表 下载

链接网址

数据表下载