STB70NFS03L datasheet(4/13 Pages) STMICROELECTRONICS

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Electrical characteristics

STB70NFS03L

4/13

Electrical characteristics

(Tcase =25°C unless otherwise specified)

Table 4.

On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 250µA, VGS = 0

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = Max rating

VDS = Max rating, TC=125°C

200

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 18V

± 100

VGS(th)

Gate threshold voltage VDS = VGS, ID = 250µA

RDS(on)

Static drain-source on

resistance

VGS = 10V, ID = 35A

VGS = 5V, ID = 18A

0.0075

0.0135

0.0095

0.018

Ω

Table 5.

Shottcky static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Reverse leakage

current

Tj = 25°C VR = 30V

Tj = 100°C VR = 30V

0.03

0.2

100

Zero gate voltage

drain current (VGS = 0)

Tj = 25°C IF = 3A

Tj = 125°C IF = 3A

0.425

0.51

0.46

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

Forward

transconductance

VDS = 25V, ID = 35A

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25 V, f = 1 MHz, VGS = 0

1440

560

135

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 15V, ID = 70A,

VGS = 5V

(see Figure 11)

22.5

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