1/10

September 2003

STGD3NB60HD

N-CHANNEL 6A - 600V - DPAK

PowerMESH™ IGBT

s

HIGH INPUT IMPEDANCE

s

OFF LOSSES INCLUDE TAIL CURRENT

s

LOW GATE CHARGE

s

HIGH FREQUENCY OPERATION

s

TYPICAL SHORT CIRCUIT WITHSTAND TIME

5micro S-family, 4 micro H family

s

CO-PACKAGED WITH TURBOSWITCH™

ANTIPARALLEL DIODE

DESCRIPTION

Using the latest high voltage technology based on a

patented strip layout, STMicroelectronics has de-

signed an advanced family of IGBTs, the Power-

MESH™ IGBTs, with outstanding perfomances.

The suffix "H" identifies a family optimized for high

frequency applications (up to 50kHz)in order to

achieve very high switching performances (reduced

tfall) mantaining a low voltage drop.

APPLICATIONS

s

HIGH FREQUENCY MOTOR CONTROLS

s

SMPS and PFC IN BOTH HARD SWITCH AND

RESONANT TOPOLOGIES

ORDERING INFORMATION

TYPE

@25°C

@100°C

STGD3NB60HD

600 V

< 2.8 V6 A

SALES TYPE

MARKING

PACKAGE

PACKAGING

STGD3NB60HDT4

GD3NB60HD

DPAK

TAPE & REEL

DPAK

1

3

INTERNAL SCHEMATIC DIAGRAM