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STGD3NB60HD 数据表(PDF) 3 Page - STMicroelectronics

部件名 STGD3NB60HD
功能描述  N-CHANNEL 6A - 600V - DPAK PowerMESH TM IGBT
PDF  10 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STGD3NB60HD 数据表(HTML) 3 Page - STMicroelectronics

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STGD3NB60HD
ELECTRICAL CHARACTERISTICS (CONTINUED)
DYNAMIC
SWITCHING ON
SWITCHING OFF
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by max. junction temperature.
(**)Losses include Also the Tail (Jedec Standardization)
COLLECTOR-EMITTER DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs
Forward Transconductance
VCE =25V , IC =3 A
2.4
S
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VCE = 25V,f= 1MHz,VGE = 0
235
33
6.6
pF
pF
pF
Qg
Qge
Qgc
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
VCE = 480V, IC =3A,
VGE =15V
21
6
7.6
27
nC
nC
nC
ICL
Latching Current
Vclamp = 480 V , Tj = 125°C
RG =10 Ω
12
A
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay Time
Rise Time
VCC =480 V, IC =3 A
RG =10Ω ,VGE =15V
5
11
ns
ns
(di/dt)on
Eon
Turn-on Current Slope
Turn-on Switching Losses
VCC= 480 V, IC = 3ARG=10Ω
VGE = 15 V,Tj = 125°C
400
77
A/µs
µJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
tc
Cross-over Time
Vcc = 480 V, IC =3 A,
RGE =10 Ω ,VGE =15 V
76
ns
tr(Voff)
Off Voltage Rise Time
36
ns
td(off)
Delay Time
53
ns
tf
Fall Time
77
ns
Eoff(**)
Turn-off Switching Loss
33
µJ
Ets
Total Switching Loss
100
µJ
tc
Cross-over Time
Vcc = 480 V, IC =3 A,
RGE =10 Ω ,VGE =15 V
Tj = 125 °C
180
ns
tr(Voff)
Off Voltage Rise Time
82
ns
td(off)
Delay Time
58
ns
tf
Fall Time
110
ns
Eoff(**)
Turn-off Switching Loss
88
µJ
Ets
Total Switching Loss
165
µJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
If
Ifm
Forward Current
Forward Current pulsed
1.5
12
A
A
Vf
Forward On-Voltage
If = 1.5 A
If = 1.5 A, Tj = 125 °C
1.6
1.3
2.1
V
V
trr
Qrr
Irrm
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
If = 1.5 A ,VR = 400 V,
Tj =125°C, di/dt = 100 A/
µs
95
110
2.7
ns
nC
A



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