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STGD3NB60SD 数据表(PDF) 2 Page - STMicroelectronics

部件名 STGD3NB60SD
功能描述  N-CHANNEL 3A - 600V - DPAK PowerMESH TM IGBT
PDF  9 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STGD3NB60SD 数据表(HTML) 2 Page - STMicroelectronics

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STGD3NB60SD
2/9
ABSOLUTE MAXIMUM RATINGS
(q) Pulse width limited by safe operating area
THERMAL DATA
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
ON (1)
DYNAMIC
Symbol
Parameter
Value
Unit
VCES
Collector-Emitter Voltage (VGS =0)
600
V
VGE
Gate-Emitter Voltage
± 20
V
IC
Collector Current (continuous) at TC =25°C
6A
IC
Collector Current (continuous) at TC = 100°C
3A
ICM ( )
Collector Current (pulsed)
25
A
PTOT
Total Dissipation at TC =25°C
48
W
Derating Factor
0.32
W/°C
Tstg
Storage Temperature
– 65 to 175
°C
Tj
Max. Operating Junction Temperature
175
°C
Rthj-case
Thermal Resistance Junction-case Max
3.125
°C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
100
°C/W
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VBR(CES)
Collectro-Emitter Breakdown
Voltage
IC = 250 µA, VGE = 0
600
V
ICES
Collector cut-off
(VGE =0)
VCE =Max Rating,TC =25 °C
10
µA
VCE =Max Rating,TC = 125 °C
100
µA
IGES
Gate-Emitter Leakage
Current (VCE =0)
VGE =±20V,VCE =0
±100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGE(th)
Gate Threshold Voltage
VCE =VGE,IC = 250µA
2.5
4.5
V
VCE(sat)
Collector-Emitter Saturation
Voltage
VGE =15V, IC =1.5 A
VGE =15V, IC =3 A
VGE =15V,IC =7 A, TJ =125 °C
1
1.2
1.1
1.5
V
V
V
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs
Forward Transconductance
VCE =10V , IC =3 A
1.7
2.5
S
Cies
Input Capacitance
VCE = 25V,f= 1MHz,VGE =0
255
pF
Coes
Output Capacitance
30
pF
Cres
Reverse Transfer
Capacitance
5.6
pF
QG
QGE
QGC
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
VCE =480 V, IC =3A,
VGE =15V
18
5.4
5.5
23
nC
nC
nC
ICL
Latching Current
Vclamp = 380 V , Tj = 25°C
RG =1KΩ
15
A



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