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STGD3NB60SD 数据表(PDF) 3 Page - STMicroelectronics

部件名 STGD3NB60SD
功能描述  N-CHANNEL 3A - 600V - DPAK PowerMESH TM IGBT
PDF  9 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STGD3NB60SD 数据表(HTML) 3 Page - STMicroelectronics

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STGD3NB60SD
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
COLLECTOR-EMITTER DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by max. junction temperature.
(**) Losses also include the Tail (Jedec Standardization)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay Time
Rise Time
VCC =480 V, IC =3 A
RG =1KΩ ,VGE =15V
125
150
µs
µs
(di/dt)on
Eon
Turn-on Current Slope
Turn-on Switching Losses
VCC= 480 V, IC =3 A, RG=1KΩ
VGE = 15 V, Tj = 125°C
50
1100
A/µs
µJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
tc
tr(Voff)
td(on)
tf
Eoff(**)
Cross-over Time
Off Voltage Rise Time
Delay Time
Fall Time
Turn-off Switching Loss
Vcc = 480 V, IC =3 A,
RGE =1KΩ ,VGE =15V
1.8
1.0
3.4
0.72
1.15
µs
µs
µs
µs
mJ
tc
tr(Voff)
td(on)
tf
Eoff(**)
Cross-over Time
Off Voltage Rise Time
Delay Time
Fall Time
Turn-off Switching Loss
Vcc = 480 V, IC =3 A,
RGE =1KΩ ,VGE =15V,
Tj = 125°C
2.8
1.45
3.6
1.2
1.8
µs
µs
µs
µs
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
If
Ifm
Forward Current
Forward Current pulsed
3
25
A
A
Vf
Forward On-Voltage
If =3A
If =1A
1.55
1.15
1.9
V
V
trr
Qrr
Irrm
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
If =3A ,VR = 200 V,
Tj =125°C, di/dt = 100A/
µs
1700
4500
9.5
ns
nC
A
Thermal Impedance



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