STL8NH3LL datasheet(4/12 Pages) STMICROELECTRONICS

部件名	STL8NH3LL

功能描述	N-channel 30V - 0.012ohm - 8A - PowerFLAT Ultra low gate charge STripFET Power MOSFET

PDF	12 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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Electrical characteristics

STL8NH3LL

4/12

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 3.

On/off states

Symbol

Parameter

Test Condictions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-Source Breakdown

Voltage

ID = 250µA, VGS= 0

IDSS

Zero Gate Voltage Drain

Current (VGS = 0)

VDS = Max Rating,

VDS = MaxRating @125°C

µA

IGSS

Gate Body Leakage Current

(VDS = 0)

VGS = ±18V

100

VGS(th)

Gate Threshold Voltage

VDS= VGS, ID = 250µA

12.5

RDS(on)

Static Drain-Source On

Resistance

VGS= 10V, ID= 4A

VGS= 4.5V, ID= 4A

0.012

0.0135

0.015

0.017

Ω

Table 4.

Dynamic

Symbol

Parameter

Test Condictions

Min.

Typ.

Max.

Unit

gfs

(1)

Pulsed: pulse duration=300µs, duty cycle 1.5%

Forward Transconductance

VDS =15V, ID = 4A

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

VDS =25V, f=1 MHz, VGS=0

965

285

Qgs

Qgd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

VDD=15V, ID = 8A

VGS =4.5V

(see Figure 7)

3.7

Gate Input Resistance

f=1 MHz Gate DC Bias = 0

Test Signal Level = 20mV

Open Drain

0.5

1.5

2.5

Ω

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