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STL8NH3LL 数据表(PDF) 5 Page - STMicroelectronics |
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STL8NH3LL 数据表(HTML) 5 Page - STMicroelectronics |
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5 / 12 page ![]() STL8NH3LL Electrical characteristics 5/12 Table 5. Switching times Symbol Parameter Test Condictions Min. Typ. Max. Unit td(on) tr td(off) tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time VDD=15V, ID= 4A, RG=4.7Ω, VGS=4.5V (see Figure 13) 15 32 18 8.5 ns ns ns ns Table 6. Source drain diode Symbol Parameter Test Condictions Min Typ. Max Unit ISD Source-drain Current 8 A ISDM (1) 1. Pulse width limited by safe operating area Source-drain Current (pulsed) 32 A VSD (2) 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward on Voltage ISD=8A, VGS=0 1.3 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD=8A, di/dt = 100A/µs, VDD=20V, Tj=150°C (see Figure 15) 24 17.4 1.45 ns nC A |
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