Electrical characteristics

STP60NH2LL

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Electrical characteristics

Table 3.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Drain-source breakdown

voltage

24

V

Zero gate voltage drain

1

10

µA

µA

Gate body leakage current

±

100

nA

Gate threshold voltage

1

V

Static drain-source on

resistance

0.010

0.012

0.011

0.0135

Ω

Table 4.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

(1)

1.

Pulsed: pulse duration=300µs, duty cycle 1.5%

Forward transconductance

18

S

Input capacitance

Output capacitance

Reverse transfer

capacitance

990

385

40

pF

pF

pF

Turn-on delay time

rise time

Turn-off delay time

fall time

(see Figure 13)

5

56

13

10

ns

ns

ns

ns

Total gate charge

Gate-source charge

Gate-drain charge

0.44

8.7

4.2

2.4

27

nC

nC

nC

(2)

2.

Qoss = Coss*

∆ Vin , Coss = Cgd + Cds . See Chapter 4: Appendix A

Output charge

7.6

nC

Gate input resistance

f=1MHz Gate DC Bias=0

test signal level=20mV

open drain

1.3

Ω