| 数据搜索系统,热门电子元器件搜索 |
|
STP60NH2LL 数据表(PDF) 5 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
STP60NH2LL 数据表(HTML) 5 Page - STMicroelectronics |
|
5 / 14 page ![]() STP60NH2LL Electrical characteristics 5/14 Table 5. Source drain diode Symbol Parameter Test conditions Min. Typ. Max Unit ISD Source-drain current 40 A ISDM Source-drain current (pulsed) 160 A VSD (1) 1. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward on voltage ISD=20A, VGS=0 1.3 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD=40A, di/dt = 100A/µs, VDD=15V, Tj=150°C (see Figure 15) 32.5 28 1.7 ns µC A |
|
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |