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M45PE16 数据表(PDF) 37 Page - STMicroelectronics

部件名 M45PE16
功能描述  16 Mbit, low-voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface
PDF  45 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

M45PE16 数据表(HTML) 37 Page - STMicroelectronics

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M45PE16
DC and AC parameters
37/45
Table 12.
AC characteristics
Test conditions specified in
Table 8 and Table 9
Symbol
Alt.
Parameter
Min.
Typ.
Max.
Unit
fC
fC
Clock Frequency for the following instructions:
FAST_READ, PW, PP, PE, SE, DP, RDP,
WREN, WRDI, RDSR
D.C.
50
MHz
fR
Clock Frequency for READ instructions
D.C.
33
MHz
tCH
(1)
tCLH Clock High Time
9
ns
tCL
(1)
tCLL
Clock Low Time
9
ns
Clock Slew Rate 2 (peak to peak)
0.1
V/ns
tSLCH
tCSS S Active Setup Time (relative to C)
5
ns
tCHSL
S Not Active Hold Time (relative to C)
5
ns
tDVCH
tDSU Data In Setup Time
2
ns
tCHDX
tDH
Data In Hold Time
5
ns
tCHSH
S Active Hold Time (relative to C)
5
ns
tSHCH
S Not Active Setup Time (relative to C)
5
ns
tSHSL
tCSH S Deselect Time
100
ns
tSHQZ
(2)
tDIS
Output Disable Time
8
ns
tCLQV
tV
Clock Low to Output Valid
8
ns
tCLQX
tHO
Output Hold Time
0
ns
tWHSL
Write Protect Setup Time
50
ns
tSHWL
Write Protect Hold Time
100
ns
tDP
(2)
S to Deep Power-down
3
µs
tRDP
(2)
S High to Standby Mode
30
µs
tRLRH
(2)
tRST Reset pulse width
10
µs
tRHSL
tREC Reset recovery time
3
µs
tSHRH
Chip should have been deselected before
Reset is de-asserted
10
ns
tPW
(3)
Page Write Cycle Time (256 Bytes)
11
23
ms
tPP
(3)
Page Program Cycle Time (256 Bytes)
0.8
3ms
Page Program Cycle Time (n Bytes)
int(n/8) × 0.025
tPE
Page Erase Cycle Time
10
20
ms
tSE
Sector Erase Cycle Time
1
5
s
1.
tCH + tCL must be greater than or equal to 1/ fC
2.
Value guaranteed by characterization, not 100% tested in production.
3.
n = number of bytes to program. int(A) corresponds to the upper integer part of A. Examples: int(1/8) = 1, int(16/8) = 2,
int(17/8) = 3.



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