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M29F040B 数据表(PDF) 3 Page - STMicroelectronics

部件名 M29F040B
功能描述  4 Mbit (512Kb x8, Uniform Block) Single Supply Flash Memory
PDF  20 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

M29F040B 数据表(HTML) 3 Page - STMicroelectronics

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M29F040B
In order to meet environmental requirements, ST
offers the M29F040B in ECOPACK® packages.
ECOPACK packages are Lead-free. The category
of second Level Interconnect is marked on the
package and on the inner box label, in compliance
with JEDEC Standard JESD97. The maximum rat-
ings related to soldering conditions are also
marked on the inner box label.
ECOPACK is an ST trademark. ECOPACK speci-
fications are available at: www.st.com.
Table 2. Absolute Maximum Ratings (1)
Note: 1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings" may
cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions
above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating condi-
tions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant qual-
ity documents.
2. Minimum Voltage may undershoot to –2V during transition and for less than 20ns during transitions.
Symbol
Parameter
Value
Unit
TA
Ambient Operating Temperature (Temperature Range Option 1)
0 to 70
°C
Ambient Operating Temperature (Temperature Range Option 6)
–40 to 85
°C
Ambient Operating Temperature (Temperature Range Option 3)
–40 to 125
°C
TBIAS
Temperature Under Bias
–50 to 125
°C
TSTG
Storage Temperature
–65 to 150
°C
VIO
(2)
Input or Output Voltage
–0.6 to 6
V
VCC
Supply Voltage
–0.6 to 6
V
VID
Identification Voltage
–0.6 to 13.5
V
Table 3. Uniform Block Addresses, M29F040B
#
Size
(Kbytes)
Address Range
7
64
70000h-7FFFFh
6
64
60000h-6FFFFh
5
64
50000h-5FFFFh
4
64
40000h-4FFFFh
3
64
30000h-3FFFFh
2
64
20000h-2FFFFh
1
64
10000h-1FFFFh
0
64
00000h-0FFFFh
SUMMARY DESCRIPTION
The M29F040B is a 4 Mbit (512Kb x8) non-volatile
memory that can be read, erased and repro-
grammed. These operations can be performed us-
ing a single 5V supply. On power-up the memory
defaults to its Read mode where it can be read in
the same way as a ROM or EPROM. The
M29F040B is fully backward compatible with the
M29F040.
The memory is divided into blocks that can be
erased independently so it is possible to preserve
valid data while old data is erased. Each block can
be protected independently to prevent accidental
Program or Erase commands from modifying the
memory. Program and Erase commands are writ-
ten to the Command Interface of the memory. An
on-chip Program/Erase Controller simplifies the
process of programming or erasing the memory
by taking care of all of the special operations that
are required to update the memory contents. The
end of a program or erase operation can be de-
tected and any error conditions identified. The
command set required to control the memory is
consistent with JEDEC standards.
Chip Enable, Output Enable and Write Enable sig-
nals control the bus operation of the memory.
They allow simple connection to most micropro-
cessors, often without additional logic.
The memory is offered in TSOP32 (8 x 20mm),
and PLCC32 packages. It is supplied with all the
bits erased (set to ‘1’).



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