M29F040B datasheet(5/20 Pages) STMICROELECTRONICS

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M29F040B

Table 4. Bus Operations

Note: X = VIL or VIH.

Operation

Address Inputs

Data

Inputs/Outputs

Bus Read

VIL

VIH

Cell Address

Data Output

Bus Write

VIL

VIH

VIL

Command Address

Data Input

Output Disable

XVIH

VIH

Hi-Z

Standby

VIH

Hi-Z

Read Manufacturer

Code

VIL

VIH

A0 = VIL, A1 = VIL, A9 = VID,

Others VIL or VIH

20h

Read Device Code

VIL

VIH

A0 = VIH, A1 = VIL, A9 = VID,

Others VIL or VIH

E2h

Automatic Standby. If CMOS levels (VCC ± 0.2V)

are used to drive the bus and the bus is inactive for

150ns or more the memory enters Automatic

Standby where the internal Supply Current is re-

duced to the CMOS Standby Supply Current, ICC3.

The Data Inputs/Outputs will still output data if a

Bus Read operation is in progress.

Special Bus Operations

Additional bus operations can be performed to

read the Electronic Signature and also to apply

and remove Block Protection. These bus opera-

tions are intended for use by programming equip-

ment and are not usually used in applications.

They require VID to be applied to some pins.

Electronic Signature. The

memory

has

two

codes, the manufacturer code and the device

code, that can be read to identify the memory.

These codes can be read by applying the signals

listed in Table 4, Bus Operations.

Block Protection and Blocks Unprotection. Each

block can be separately protected against acci-

dental Program or Erase. Protected blocks can be

unprotected to allow data to be changed. Block

Protection and Blocks Unprotection operations

must only be performed on programming equip-

ment. For further information refer to Application

Note AN1122, Applying Protection and Unprotec-

tion to M29 Series Flash.

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