PUSB3CB4

Extremely low capacitance bidirectional ESD protection

diode array

8 August 2023

Short data sheet

1. General description

Extremely low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode array, part

of the TrEOS protection family. This device is housed in a DFN2510A-10 (SOT1176) leadless ultra

small Surface-Mounted Device (SMD) plastic package, designed to protect four signal lines from

the damage caused by ESD and other transients.

2. Features and benefits

• Bidirectional ESD protection for four signal lines

• VRWM = 3.3 V device

• Extremely low clamping voltage to protect sensitive I/Os

• Extremely low clamping voltage: 5.4 V for 6.5 A 8/20 µs surge

• IEC 61000-4-4 robust up to 40 A into a 50 Ohm termination (2 kV)

• IEC 61000-4-5 (surge): IPP = 8.2 A peak pulse (average measured)

• Extremely low diode capacitance Cd = 0.19 pF typical at 1.5 V

• ESD protection up to ±15 kV according to IEC 61000-4-2

• Leadless ultra small DFN2510A-10 (SOT1176) surface mount package

3. Applications

• Cellular handsets and accessories

• Portable electronics

• Communication systems

• Computers and peripherals

• USB3.2 and HDMI2.1 data lines

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VRWM

reverse standoff

voltage

-3.3

-

3.3

V

Cd

diode capacitance

f = 1 MHz; VR = 1.5 V; Tamb = 25 °C

[1]

-

0.19

0.23

pF

[1] Measured on pin 1