NAND04GA3C2A datasheet(1/51 Pages) STMICROELECTRONICS

部件名	NAND04GA3C2A

功能描述	4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory

PDF	51 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

1 / 51 page

November 2006

Rev 2

1/51

1

NAND04GA3C2A

NAND04GW3C2A

4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory

Features

■

High density multi-level Cell (MLC) NAND

Flash memories:

– Up to 128 Mbit spare area

– Cost effective solutions for mass storage

applications

■

NAND interface

– x8 bus width

– Multiplexed Address/ Data

■

Supply voltages

–VDD = 2.7 to 3.6V core supply voltage for

Program, Erase and Read operations.

–VDDQ = 1.7 to 1.95 or 2.7 to 3.6V for I/O

buffers.

■

Page size: (2048 + 64 spare) Bytes

■

Block size: (256K + 8K spare) Bytes

■

Page Read/Program

– Random access: 60µs (max)

– Sequential access: 60ns(min)

– Page Program Operation time: 800µs (typ)

■

Cache Read mode

– Internal Cache Register to improve the

read throughput

■

Fast Block Erase

– Block erase time: 1.5ms (typ)

■

Status Register

■

Electronic Signature

■

Serial Number option

■

Chip Enable ‘don’t care’

– for simple interface with microcontroller

■

Data Protection

– Hardware Program/Erase locked during

power transitions

■

Embedded Error Correction Code (ECC)

– Internal ECC accelerator

– Easy ECC Command Interface

■

Data integrity

– 10,000 Program/Erase cycles (with ECC)

– 10 years Data Retention

■

ECOPACK® package available

■

Development tools

– Bad Blocks Management and Wear

Leveling algorithms

– File System OS Native reference software

– Hardware simulation models

TSOP48 12 x 20mm

Table 1.

Product List

Reference

Part Number

Density

NAND04Gx3C2A

NAND04GA3C2A

4 Gbits

NAND04GW3C2A

www.st.com

类似零件编号 - NAND04GA3C2A

制造商	部件名	数据表	功能描述
STMicroelectronics	NAND04G-B	383Kb / 59P	512 Mbit, 1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 25-Feb-2005
Numonyx B.V	NAND04G-B2D	1Mb / 69P	4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories
STMicroelectronics	NAND04GR3B	383Kb / 59P	512 Mbit, 1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 25-Feb-2005
Numonyx B.V	NAND04GR3B2CN1E	1Mb / 69P	4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories
Numonyx B.V	NAND04GR3B2CN1F	1Mb / 69P	4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories

More results

类似说明 - NAND04GA3C2A

制造商	部件名	数据表	功能描述
STMicroelectronics	NAND01G-B	631Kb / 64P	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 13-Feb-2006
	NAND01G-N	217Kb / 23P	1 Gbit (x8/x16) 2112 Byte Page NAND Flash Memory and 512 Mbit (x16) LPSDRAM, 1.8V, Multi-Chip Package 31-Jan-2006
	NAND04GW3B2B	501Kb / 58P	4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories 30-May-2006
	NAND01G-B2B	711Kb / 62P	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 23-Nov-2006
Numonyx B.V	NAND01G-B2B	1Mb / 60P	1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
	NAND04GW3B2B	1Mb / 58P	4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories
	NAND08GW3C2A	1Mb / 58P	8/16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory
	NAND08GW3C2B	1Mb / 60P	8 or 16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory
	NAND01GR3B2C	1Mb / 67P	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory January 2010 Rev 5
STMicroelectronics	NAND512-B	383Kb / 59P	512 Mbit, 1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 25-Feb-2005

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