1

1

3

3

2

STAC780-4B

Pin connection

Pin

Connection

1

Drain

2

Source (bottom side)

3

Gate

Features

Order code

Frequency

VDD

POUT

Gain

Efficiency

STAC4932B

123 MHz

100 V

1000 W

24.6 dB

60 %

•

Excellent thermal stability

•

Common source push-pull configuration

•

POUT = 1000 W min. (1200 W typ.) with 24.6 dB gain at 123 MHz

•

Pulse conditions: 1ms, 10%

•

In compliance with the 2002/95/EC European directive

•

ST air-cavity STAC package technology

Description

The STAC4932B is an N-channel MOS field-effect RF power transistor. It is intended

for 100 V pulse applications up to 250 MHz. This device is suitable for use in

industrial, scientific and medical applications. The STAC4932B benefits from the

latest generation of efficient, patent-pending STAC package technology.

Product status

STAC4932B

Product summary

Order code

STAC4932B

Marking

STAC4932

Package

STAC780-4B

Packing

Box

Base / Bulk qty

20 / 80

HF/VHF/UHF RF power N-channel MOSFET

STAC4932B

Datasheet

DS6724 - Rev 8 - April 2020

For further information contact your local STMicroelectronics sales office.

www.st.com