2

Electrical characteristics

( TCASE= +25 °C, unless otherwise noted)

2.1

Static

Table 4. Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

VGS = 0 V, IDS = 100 mA,

TJ = 150 °C

200

250

V

IDSS

Zero gate voltage drain

leakage current

VGS = 0 V, VDS = 100 V

1

mA

IGSS

Gate-source leakage current

VGS = 20 V, VDS = 0 V

250

nA

VDS(ON)

Drain-source on voltage

VGS = 10 V, ID = 10 A

3.6

V

VTH

Gate-source threshold

voltage

IDS = 250 mA

2

4

V

GFS

Forward transconductance

VDS = 10 V, ID = 2.5 A

6

S

CISS

Input capacitance

VGS = 0 V, VDS = 100 V,

f = 1 MHz

570

pF

COSS

Ouput capacitance

134

pF

CRSS

Reverse transfer capacitance

8

pF

2.2

Dynamic

Table 5. Dynamic (1)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

POUT

Output power

1000

1200

-

W

ŋD

Drain efficiency

POUT = 1000 W

60

-

%

Gps

Power gain

POUT = 1000 W

26

-

dB

1. VDD = 100 V, IDQ = 2 x 250 mA, f = 123 MHz, PW 1ms, DC = 10%

STAC4932B

Electrical characteristics

DS6724 - Rev 8

page 3/13