5

TLV341, TLV341A, TLV342, TLV342S

www.ti.com

SLVS568D – JANUARY 2005 – REVISED APRIL 2016

Product Folder Links: TLV341 TLV341A TLV342 TLV342S

Submit Documentation Feedback

Copyright © 2005–2016, Texas Instruments Incorporated

6.3 Recommended Operating Conditions

MIN

MAX

UNIT

V+

Supply voltage (single-supply operation)

1.5

5.5

V

TA

Operating free-air temperature

–40

125

°C

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report, SPRA953.

6.4 Thermal Information: TLV341

THERMAL METRIC(1)

TLV341

UNIT

DBV

(SOT-23)

DCK

(SC70)

DRL

(SOT)

6 PINS

6 PINS

6 PINS

RθJA

Junction-to-ambient thermal resistance

193.4

196.8

221.1

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

145.6

82.4

109.1

°C/W

RθJB

Junction-to-board thermal resistance

44.1

95.2

111.4

°C/W

ψJT

Junction-to-top characterization parameter

34.1

1.8

6.2

°C/W

ψJB

Junction-to-board characterization parameter

43.4

93.2

109.8

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report, SPRA953.

6.5 Thermal Information: TLV342

THERMAL METRIC(1)

TLV342

UNIT

D

(SOIC)

DGK

(MSOP)

RUG

(X2QFN)

8 PINS

8 PINS

10 PINS

RθJA

Junction-to-ambient thermal resistance

123.6

192.3

167

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

69.8

78.2

56.5

°C/W

RθJB

Junction-to-board thermal resistance

63.9

112.6

94.3

°C/W

ψJT

Junction-to-top characterization parameter

24.4

15.2

4.1

°C/W

ψJB

Junction-to-board characterization parameter

63.4

111.2

94

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report, SPRA953.

6.6 Thermal Information: TLV342S

THERMAL METRIC(1)

TLV342S

UNIT

RUG

(X2QFN)

10 PINS

RθJA

Junction-to-ambient thermal resistance

158.3

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

52.6

°C/W

RθJB

Junction-to-board thermal resistance

87.9

°C/W

ψJT

Junction-to-top characterization parameter

1

°C/W

ψJB

Junction-to-board characterization parameter

87

°C/W