Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BUT11AF

GENERAL DESCRIPTION

High-voltage, high-speed glass-passivated npn power transistor in a SOT186 envelope with electrically insulated

mounting base,intended for use in converters, inverters, switching regulators, motor control systems, etc.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

V

CESM

Collector-emitter voltage peak value

V

-

1000

V

V

CEO

Collector-emitter voltage (open base)

-

450

V

I

C

Collector current (DC)

-

5

A

I

CM

Collector current peak value

-

10

A

P

tot

Total power dissipation

T

-

20

W

V

CEsat

Collector-emitter saturation voltage

-

1.5

V

I

Csat

Collector saturation current

2.5

-

A

t

f

Fall time

800

-

ns

[INCLUDE]

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V

CESM

Collector-emitter voltage peak value

V

-

1000

V

V

CEO

Collector-emitter voltage (open base)

-

450

V

I

C

Collector current (DC)

-

5

A

I

CM

Collector current peak value

-

10

A

I

B

Base current (DC)

-

2

A

I

BM

Base current peak value

-

4

A

P

tot

Total power dissipation

T

-

20

W

T

stg

Storage temperature

-65

150

˚C

T

j

Junction temperature

-

150

˚C

THERMAL RESISTANCES

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

R

th j-hs

Junction to heatsink

with heatsink compound

-

3.95

K/W

R

th j-a

Junction to ambient

in free air

55

-

K/W

ISOLATION LIMITING VALUE & CHARACTERISTIC

T

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V

isol

Repetitive peak voltage from all

R.H.

≤ 65% ; clean and dustfree

-

1500

V

three terminals to external

heatsink

C

isol

Capacitance from T2 to external f = 1 MHz

-

12

-

pF

heatsink

August 1997

1

Rev 1.000