BUT11AI datasheet(1/4 Pages) PHILIPS

部件名	BUT11AI

功能描述	Silicon Diffused Power Transistor

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制造商	PHILIPS [NXP Semiconductors]

网页	http://www.nxp.com

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Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BUT11AI

GENERAL DESCRIPTION

Enhanced performance, high speed switching npn transistor in TO220AB envelope specially suited for high

frequency electronic lighting ballast applications and converters, inverters, switching regulators, motor control

systems etc.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

V

CESM

Collector-emitter voltage peak value

V

BE = 0 V

-

1000

V

CEO

Collector-emitter voltage (open base)

-

450

V

I

C

Collector current (DC)

-

5

A

I

CM

Collector current peak value

-

10

A

P

tot

Total power dissipation

T

mb ≤ 25 ˚C

-

100

W

V

CEsat

Collector-emitter saturation voltage

I

C = 2.5 A; IB = 0.33 A

-

1.5

V

I

Csat

Collector Saturation current

2.5

A

t

f

Inductive fall time

I

Con = 2.5 A; IBon = 0.5 A

0.08

0.15

µs

PINNING - TO220AB

PIN CONFIGURATION

SYMBOL

DESCRIPTION

1

base

2

collector

3

emitter

tab

collector

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V

CESM

Collector-emitter voltage peak value

V

BE = 0 V

-

1000

V

CEO

Collector-emitter voltage (open base)

-

450

V

I

C

Collector current (DC)

-

5

A

I

CM

Collector current peak value

-

10

A

I

B

Base current (DC)

-

2

A

I

BM

Base current peak value

-

4

A

P

tot

Total power dissipation

T

mb ≤

25 ˚C

-

100

W

T

stg

Storage temperature

-65

150

˚C

T

j

Junction temperature

-

150

˚C

THERMAL RESISTANCES

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

R

th j-mb

Junction to mounting base

-

1.25

K/W

R

th j-a

Junction to ambient

in free air

-

60

K/W

12 3

tab

b

c

e

August 1997

1

Rev 1.000

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