Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BUT11AI

STATIC CHARACTERISTICS

T

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

I

CES

Collector cut-off current

1

V

-

-

1.0

mA

I

CES

V

-

-

2.0

mA

T

I

EBO

Emitter cut-off current

V

-

-

10.0

mA

V

CEOsust

Collector-emitter sustaining voltage

I

450

-

-

V

L = 25 mH

V

CEsat

Collector-emitter saturation voltage

I

-

-

1.5

V

V

BEsat

Base-emitter saturation voltage

I

-

-

1.3

V

h

FE

DC current gain

I

10

20

35

h

FE

I

14

22

35

h

FEsat

I

9

13

17

DYNAMIC CHARACTERISTICS

T

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

Switching times resistive load

I

Turn-on time

0.6

1.0

µs

t

on

3.4

0.6

t

s

Turn-off storage time

-

4.0

µs

t

f

Turn-off fall time

-

0.8

µs

Switching times inductive load

I

-V

t

s

Turn-off storage time

1.1

1.4

µs

t

f

Turn-off fall time

80

150

ns

I

-V

t

s

Turn-off storage time

1.2

1.5

µs

t

f

Turn-off fall time

140

300

ns

[INCLUDE]

1 Measured with half sine-wave voltage (curve tracer).

August 1997

2

Rev 1.000