| 数据搜索系统,热门电子元器件搜索 |
|
ISC030N12NM6 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
|
|
|||||||||||||||||||||||||||||
ISC030N12NM6 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
|
2 / 3 page ![]() isc N-Channel MOSFET Transistor ISC030N12NM6 www.iscsemi.com 2023-9-19 22 Electrical Characteristics (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID=1mA 120 -- -- V VGS(TH) Gate Threshold Voltage VDS= VGS; ID= 141uA 2.6 -- 3.6 V RDS(ON) Drain-Source On-stage Resistance VGS=10V; ID=50A -- 2.5 3.04 m RDS(ON) Drain-Source On-stage Resistance VGS=8V; ID=25A -- 2.9 3.7 m IGSS Gate Source Leakage Current VGS=±20V;VDS=0 -- -- ± 100 nA IDSS Zero Gate Voltage Drain Current VDS=100V; VGS=0 -- -- 1 uA VSD Diode Forward Voltage VGS=0V,IS=50A -- 0.82 1.0 V trr Reverse Recovery Time IF=25A, dIF/dt=300A/ms VR=60V -- 33 -- ns Package Outlines |
|
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |