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ISC030N12NM6 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited |
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ISC030N12NM6 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() isc N-Channel MOSFET Transistor ISC030N12NM6 www.iscsemi.com 2023-9-19 11 DESCRIPTION · Drain Current –ID=194A@ TC=25℃ · Drain Source Voltage- VDSS= 120V(Min) APPLICATIONS · Synchronous Rectification in SMPS · Switching converters,motor driver,relay driver·Power Tools · UPS · Motor Control Absolute Maximum Ratings(Tc=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 120 V VGS Gate-Source Voltage ± 20 V ID Drain Current-continuous@ TC=25℃ 194 A ID Drain Current-continuous@ TC=100℃ 137 A IDM Pulsed drain current @ TC=25℃ 776 A EAS Avalanche Energy, Single Pulse ,L=0.3mH, TC=25℃ 1483 mJ PD Power Dissipation ,TC=25℃ 250 W Tj Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature Range -55~175 ℃ Thermal Characteristics SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.6 ℃ /W |
类似零件编号 - ISC030N12NM6 |
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类似说明 - ISC030N12NM6 |
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