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IRFS3207ZPBF 数据表(PDF) 2 Page - International Rectifier |
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IRFS3207ZPBF 数据表(HTML) 2 Page - International Rectifier |
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2 / 11 page  IRFB/S/SL3207ZPbF 2 www.irf.com Notes: Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25°C, L = 0.065mH RG = 25Ω, IAS = 75A, VGS =10V. Part not recommended for use above this value. ISD ≤ 75A, di/dt ≤ 1730A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 400µs; duty cycle ≤ 2%. S D G Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. When mounted on 1" square PCB (FR-4 or G-10 Material). For recom mended footprint and soldering techniques refer to application note #AN-994. Rθ is measured at TJ approximately 90°C. Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 75 ––– ––– V ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.091 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 3.3 4.1 m Ω VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V RG(int) Internal Gate Resistance ––– 0.80 ––– Ω IDSS Drain-to-Source Leakage Current ––– ––– 20 µA ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100 Dynamic @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units gfs Forward Transconductance 280 ––– ––– S Qg Total Gate Charge ––– 120 170 nC Qgs Gate-to-Source Charge ––– 27 ––– Qgd Gate-to-Drain ("Miller") Charge ––– 33 ––– Qsync Total Gate Charge Sync. (Qg - Qgd) ––– 87 ––– td(on) Turn-On Delay Time ––– 20 ––– ns tr Rise Time ––– 68 ––– td(off) Turn-Off Delay Time ––– 55 ––– tf Fall Time ––– 68 ––– Ciss Input Capacitance ––– 6920 ––– pF Coss Output Capacitance ––– 600 ––– Crss Reverse Transfer Capacitance ––– 270 ––– Coss eff. (ER) Effective Output Capacitance (Energy Related)i ––– 770 ––– Coss eff. (TR) Effective Output Capacitance (Time Related)h ––– 960 ––– Diode Characteristics Symbol Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 170c A (Body Diode) ISM Pulsed Source Current ––– ––– 670 (Body Diode) di VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 36 54 ns TJ = 25°C VR = 64V, ––– 41 62 TJ = 125°C IF = 75A Qrr Reverse Recovery Charge ––– 50 75 nC TJ = 25°C di/dt = 100A/µs g ––– 67 100 TJ = 125°C IRRM Reverse Recovery Current ––– 2.4 ––– A TJ = 25°C ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Conditions VDS = 50V, ID = 75A ID = 75A VGS = 20V VGS = -20V MOSFET symbol showing the VDS = 38V Conditions VGS = 10V g VGS = 0V VDS = 50V ƒ = 1.0MHz VGS = 0V, VDS = 0V to 60V j VGS = 0V, VDS = 0V to 60V h TJ = 25°C, IS = 75A, VGS = 0V g integral reverse p-n junction diode. Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 5mA d VGS = 10V, ID = 75A g VDS = VGS, ID = 150µA VDS = 75V, VGS = 0V VDS = 75V, VGS = 0V, TJ = 125°C ID = 75A RG = 2.7Ω VGS = 10V g VDD = 49V ID = 75A, VDS =0V, VGS = 10V |
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