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IRFS3207ZPBF 数据表(PDF) 4 Page - International Rectifier

部件名 IRFS3207ZPBF
功能描述  HEXFET Power MOSFET
PDF  11 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  IRF [International Rectifier]
网页  http://www.irf.com
标志 IRF - International Rectifier

IRFS3207ZPBF 数据表(HTML) 4 Page - International Rectifier

  IRFS3207ZPBF Datasheet HTML 1Page - International Rectifier IRFS3207ZPBF Datasheet HTML 2Page - International Rectifier IRFS3207ZPBF Datasheet HTML 3Page - International Rectifier IRFS3207ZPBF Datasheet HTML 4Page - International Rectifier IRFS3207ZPBF Datasheet HTML 5Page - International Rectifier IRFS3207ZPBF Datasheet HTML 6Page - International Rectifier IRFS3207ZPBF Datasheet HTML 7Page - International Rectifier IRFS3207ZPBF Datasheet HTML 8Page - International Rectifier IRFS3207ZPBF Datasheet HTML 9Page - International Rectifier Next Button
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IRFB/S/SL3207ZPbF
4
www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 10. Drain-to-Source Breakdown Voltage
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 11. Typical COSS Stored Energy
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
0.0
0.5
1.0
1.5
2.0
2.5
VSD, Source-to-Drain Voltage (V)
0.1
1
10
100
1000
TJ = 25°C
TJ = 175°C
VGS = 0V
25
50
75
100
125
150
175
TC , Case Temperature (°C)
0
20
40
60
80
100
120
140
160
180
Limited By Package
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Temperature ( °C )
70
75
80
85
90
95
100
Id = 5mA
-10
0
10
20
30
40
50
60
70
80
VDS, Drain-to-Source Voltage (V)
0.0
0.5
1.0
1.5
2.0
2.5
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
0
100
200
300
400
500
600
700
800
ID
TOP
16A
28A
BOTTOM 75A
1
10
100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
10000
OPERATION IN THIS AREA
LIMITED BY RDS(on)
Tc = 25°C
Tj = 175°C
Single Pulse
100µsec
1msec
10msec
DC



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