Electrical characteristics

STS4DNFS30

4/12

2

Electrical characteristics

(Tcase =25°C unless otherwise specified)

Table 4.

On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Drain-source

breakdown voltage

30

V

Zero gate voltage

1

10

µA

µA

Gate-body leakage

± 100

nA

1

V

Static drain-source on

resistance

0.044

0.055

0.085

Ω

Ω

Table 5.

Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

(1)

1.

Pulse test: tp=380µs,

δ < 2%. To evaluate the conduction losses use the following equation:

Reverse leakage

current

6

200

15

µA

mA

(1)

Zero gate voltage

0.325

0.45

0.375

V

V

0.43

0.53

0.51

V

V

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Forward

transconductance

5

S

Input capacitance

Output capacitance

Reverse transfer

capacitance

330

115

28

pF

pF

pF

Total gate charge

Gate-source charge

Gate-drain charge

(see Figure 13)

4.7

1.2

2.1

nC

nC

nC

P0.24

I

FAV

()

×

0.068I

F

()

+

=