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STS4DNFS30 数据表(PDF) 5 Page - STMicroelectronics

部件名 STS4DNFS30
功能描述  N-channel - 30V - 0.044ohm - 4.5A SO-8 STripFET tm Power MOSFET plus schottky rectifier
PDF  12 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STS4DNFS30 数据表(HTML) 5 Page - STMicroelectronics

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STS4DNFS30
Electrical characteristics
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Table 7.
Switching times
Symbol
Parameter
Test Conditions
Min.
Typ.
Max
Unit
td(on)
tr
Turn-on delay time
Rise time
VDD = 15V, ID = 2A,
RG = 4.7Ω, VGS = 5V
(see Figure 12)
9
17
ns
ns
td(off)
tf
Turn-off delay time
Fall time
VDD = 15V, ID = 2A,
RG = 4.7Ω, VGS = 5V
(see Figure 12)
15
6
ns
ns
Table 8.
Source drain diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current
Source-drain current (pulsed)
4.5
13
A
A
VSD
(2)
2.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Forward on voltage
ISD = 4.5A, VGS = 0
1.2
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 4.5A, di/dt = 100A/µs
VDD = 15V, Tj = 150°C
(see Figure 17)
22
14.3
1.3
ns
nC
A



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