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SIM800L 数据表(PDF) 37 Page - SIMCom |
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SIM800L 数据表(HTML) 37 Page - SIMCom |
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37 / 73 page ![]() Smart Machine Smart Decision Figure 32: Speaker with amplifier reference circuit 4.7.3. Audio Electronic Characteristic Table 15: Microphone input characteristics Parameter Min Typ Max Unit Microphone biasing voltage 1.9 2.2 V Working current 2.0 mA Input impedance(differential) 13 20 27 KΩ Idle channel noise -67 dBm0 Input level:-40dBm0 29 dB SINAD Input level:0dBm0 69 dB Table 16: Audio output characteristics Parameter Conditions Min Typ Max Unit RL=32 Ω receiver - 90 - mW Normal output RL=8 Ω speaker - - 1080 mW 4.7.4. TDD Audio signal could be interferenced by RF signal. Coupling noise could be filtered by adding 33pF and 10pF capacitor to audio lines. 33pF capacitor could eliminate noise from GSM850/EGSM900MHz, while 10pF capacitor could eliminate noise from DCS1800/PCS1900Mhz frequency. Customer should develop this filter solution according to field test result. GSM antenna is the key coupling interfering source of TDD noise. Thereat, pay attention to the layout of audio lines which should be far away from RF cable, antenna and VBAT pin. The bypass capacitor for filtering should be placed near module and another group needs to be placed near to connector. Conducting noise is mainly caused by the VBAT drop. If audio PA was powered by VBAT directly, then there SIM800H&SIM800L_Hardware Design_V2.02 37 2015-07-27 |
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