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BYD52J 数据表(PDF) 2 Page - NXP Semiconductors

部件名 BYD52J
功能描述  Fast soft-recovery controlled avalanche rectifiers
PDF  8 Pages
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制造商  PHILIPS [NXP Semiconductors]
网页  http://www.nxp.com
标志 PHILIPS - NXP Semiconductors

BYD52J 数据表(HTML) 2 Page - NXP Semiconductors

  BYD52J Datasheet HTML 1Page - NXP Semiconductors BYD52J Datasheet HTML 2Page - NXP Semiconductors BYD52J Datasheet HTML 3Page - NXP Semiconductors BYD52J Datasheet HTML 4Page - NXP Semiconductors BYD52J Datasheet HTML 5Page - NXP Semiconductors BYD52J Datasheet HTML 6Page - NXP Semiconductors BYD52J Datasheet HTML 7Page - NXP Semiconductors BYD52J Datasheet HTML 8Page - NXP Semiconductors  
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1998 Dec 03
2
Philips Semiconductors
Preliminary specification
Fast soft-recovery controlled
avalanche rectifiers
BYD52 series
FEATURES
• Glass passivated
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy
absorption capability
• Available in ammo-pack.
DESCRIPTION
Cavity free cylindrical glass SOD120
package through Implotec
(1)
technology. This package is
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
(1) Implotec is a trademark of Philips.
Fig.1 Simplified outline (SOD120) and symbol.
handbook, halfpage
ka
MGL571
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
ELECTRICAL CHARACTERISTICS
Tj =25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
BYD52D
200
V
BYD52G
400
V
BYD52J
600
V
VR
continuous reverse voltage
BYD52D
200
V
BYD52G
400
V
BYD52J
600
V
IF(AV)
average forward current
Tamb =25 °C; printed-circuit board
mounting, pitch 5 mm, see Fig.6;
averaged over any 20 ms period;
see Fig.2
0.47
A
IFSM
non-repetitive peak forward current
t = 10 ms half sine wave;
Tj =25 °C; VR =VRRMmax
5A
Tstg
storage temperature
−65
+175
°C
Tj
junction temperature
see fig.3
−65
+175
°C
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
VF
forward voltage
IF = 1 A; see Fig.4
3.6
V
IR
reverse current
VR =VRRMmax
1
µA
VR =VRRMmax; Tj = 165 °C; see Fig.5
100
µA
trr
reverse recovery time
when switched from IF = 0.5 A to IR =1A;
measured at IR = 0.25 A; see Fig.7
30
ns



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