BYD57D datasheet(3/12 Pages) PHILIPS

3 / 12 page

1999 Nov 11

Philips Semiconductors

Product speciﬁcation

Ultra-fast soft-recovery

controlled avalanche rectiﬁers

BYD57 series

ELECTRICAL CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

IFRM

repetitive peak forward current

Tamb =60 °C; see Figs 8 and 9

BYD57D to M

−

3.0

BYD57U and V

−

3.7

IFSM

non-repetitive peak forward current

t = 10 ms half sinewave; Tj =25 °C

prior to surge; VR =VRRMmax

−

5.0

ERSM

non-repetitive peak reverse

avalanche energy

L = 120 mH; Tj =Tj max prior to

surge; inductive load switched off

−

Tstg

storage temperature

−65

+175

°C

junction temperature

see Fig.12

−65

+175

°C

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

forward voltage

IF = 1 A; Tj =Tj max;

see Figs 13 and 14

BYD57D to M

−−

2.1

BYD57U and V

−−

1.7

forward voltage

IF =1A;

see Figs 13 and 14

BYD57D to M

−−

3.6

BYD57U and V

−−

2.3

V(BR)R

reverse avalanche breakdown

voltage

IR = 0.1 mA

BYD57D

300

−−

BYD57G

500

−−

BYD57J

700

−−

BYD57K

900

−−

BYD57M

1100

−−

BYD57U

1300

−−

BYD57V

1500

−−

reverse current

VR =VRRMmax;

see Fig.15

−−

µA

VR =VRRMmax;

Tj = 165 °C; see Fig.15

−−

100

µA

trr

reverse recovery time

when switched from

IF = 0.5 A to IR =1A;

measured at IR = 0.25 A;

see Fig.18

BYD57D to J

−−

BYD57K and M

−−

BYD57U and V

−−

150

diode capacitance

f = 1 MHz; VR =0;

see Fig.16

−

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

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