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BYD63 数据表(PDF) 2 Page - NXP Semiconductors

部件名 BYD63
功能描述  Ripple blocking diode
PDF  7 Pages
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制造商  PHILIPS [NXP Semiconductors]
网页  http://www.nxp.com
标志 PHILIPS - NXP Semiconductors

BYD63 数据表(HTML) 2 Page - NXP Semiconductors

  BYD63 Datasheet HTML 1Page - NXP Semiconductors BYD63 Datasheet HTML 2Page - NXP Semiconductors BYD63 Datasheet HTML 3Page - NXP Semiconductors BYD63 Datasheet HTML 4Page - NXP Semiconductors BYD63 Datasheet HTML 5Page - NXP Semiconductors BYD63 Datasheet HTML 6Page - NXP Semiconductors BYD63 Datasheet HTML 7Page - NXP Semiconductors  
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1996 Jun 10
2
Philips Semiconductors
Product specification
Ripple blocking diode
BYD63
FEATURES
• Glass passivated
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• Guaranteed minimum turn-on time
for absorbing forward current
transients and oscillations
• Specially designed as rectifier in
the auxiliary power supply in e.g.
switched mode power supplies
• Available in ammo-pack.
DESCRIPTION
Cavity free cylindrical glass package
through Implotec
(1) technology.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
(1) Implotec is a trademark of Philips.
Fig.1 Simplified outline (SOD81) and symbol.
handbook, 4 columns
a
k
MAM123
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
300
V
VR
continuous reverse voltage
300
V
IF(AV)
average forward current
averaged over any 20 ms period;
Ttp = 55 °C; lead length = 10 mm;
see Fig.2; see also Fig.4
0.85
A
averaged over any 20 ms period;
Tamb = 65 °C;
PCB mounting (Fig.8);
see Fig.3; see also Fig.4
0.45
A
IFRM
repetitive peak forward current
Ttp = 55 °C
8.25
A
Tamb = 65 °C
4.45
A
IFSM
non-repetitive peak forward current
t = 10 ms half sine wave;
Tj = Tj max prior to surge;
VR = VRRMmax
5
A
Tstg
storage temperature
−65
+175
°C
Tj
junction temperature
−65
+175
°C



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