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BYD63 数据表(PDF) 2 Page - NXP Semiconductors

部件名 BYD63
功能描述  Ripple blocking diode
PDF  7 Pages
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制造商  PHILIPS [NXP Semiconductors]
网页  http://www.nxp.com
标志 PHILIPS - NXP Semiconductors

BYD63 数据表(HTML) 2 Page - NXP Semiconductors

  BYD63 Datasheet HTML 1Page - NXP Semiconductors BYD63 Datasheet HTML 2Page - NXP Semiconductors BYD63 Datasheet HTML 3Page - NXP Semiconductors BYD63 Datasheet HTML 4Page - NXP Semiconductors BYD63 Datasheet HTML 5Page - NXP Semiconductors BYD63 Datasheet HTML 6Page - NXP Semiconductors BYD63 Datasheet HTML 7Page - NXP Semiconductors  
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1996 Jun 10
2
Philips Semiconductors
Product specification
Ripple blocking diode
BYD63
FEATURES
• Glass passivated
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• Guaranteed minimum turn-on time
for absorbing forward current
transients and oscillations
• Specially designed as rectifier in
the auxiliary power supply in e.g.
switched mode power supplies
• Available in ammo-pack.
DESCRIPTION
Cavity free cylindrical glass package
through Implotec
™(1) technology.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
(1) Implotec is a trademark of Philips.
Fig.1 Simplified outline (SOD81) and symbol.
handbook, 4 columns
a
k
MAM123
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
−
300
V
VR
continuous reverse voltage
−
300
V
IF(AV)
average forward current
averaged over any 20 ms period;
Ttp = 55 °C; lead length = 10 mm;
see Fig.2; see also Fig.4
−
0.85
A
averaged over any 20 ms period;
Tamb = 65 °C;
PCB mounting (Fig.8);
see Fig.3; see also Fig.4
−
0.45
A
IFRM
repetitive peak forward current
Ttp = 55 °C
−
8.25
A
Tamb = 65 °C
−
4.45
A
IFSM
non-repetitive peak forward current
t = 10 ms half sine wave;
Tj = Tj max prior to surge;
VR = VRRMmax
−
5
A
Tstg
storage temperature
−65
+175
°C
Tj
junction temperature
−65
+175
°C



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