BYD63 datasheet(3/7 Pages) PHILIPS

3 / 7 page

1996 Jun 10

Philips Semiconductors

Product speciﬁcation

Ripple blocking diode

BYD63

ELECTRICAL CHARACTERISTICS

Tj = 25 °C unless otherwise speciﬁed.

THERMAL CHARACTERISTICS

Note

1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer

≥40 µm, see Fig.8.

For more information please refer to the

‘General Part of Handbook SC01.’

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

forward voltage

IF = 1 A; Tj = Tj max; see Fig.5

−

1.7

IF = 1 A; see Fig.5

−

2.3

reverse current

VR = VRRMmax;

see Fig.6

−

µA

VR = VRRMmax; Tj = 165 °C;

see Fig.6

−

100

µA

tfr

forward recovery time

when switched to IF = 1 A

in 50 ns; see Fig.9

−

350

ton

turn-on time

when switched from VF = 0 V to

VF = 3 V; measured between

10% and 90% of IF max;

see Fig.11

500

−

trr

reverse recovery time

when switched from IF = 0.5 A to

IR = 1 A; measured at

IR = 0.25 A; see Fig.11

−

150

diode capacitance

f = 1 MHz; VR = 0 V; see Fig.7

−

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-tp

thermal resistance from junction to tie-point

lead length = 10 mm

K/W

Rth j-a

thermal resistance from junction to ambient

note 1

120

K/W

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