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BYV42EX 数据表(PDF) 3 Page - NXP Semiconductors |
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BYV42EX 数据表(HTML) 3 Page - NXP Semiconductors |
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3 / 7 page ![]() Philips Semiconductors Product specification Rectifier diodes BYV42F, BYV42EX series ultrafast, rugged Fig.1. Definition of t rr1, Qs and Irrm Fig.2. Definition of V fr Fig.3. Circuit schematic for t rr2 Fig.4. Definition of t rr2 Fig.5. Maximum forward dissipation P F = f(IF(AV)) per diode; square current waveform where I F(AV) =IF(RMS) x √D. Fig.6. Maximum forward dissipation P F = f(IF(AV)) per diode; sinusoidal current waveform where a = form factor = I F(RMS) / IF(AV). Q s 100% 10% time dI dt F I R I F I rrm t rr I = 1A R rec I = 0.25A 0A trr2 0.5A IF IR time time V F V fr V F I F 0 5 10 15 20 25 0 5 10 15 20 25 D = 1.0 0.5 0.2 0.1 BYV72 Rs = 0.0130 Ohms Vo = 0.7050 V IF(AV) / A PF / W D = tp tp T T t I Ths(max) / C 150 125 100 75 50 25 shunt Current to ’scope D.U.T. Voltage Pulse Source R 0 5 10 15 0 5 10 15 20 1.9 2.2 2.8 4 BYV72 IF(AV) / A PF / W Ths(max) / C 150 125 100 75 50 a = 1.57 Vo = 0.705 V Rs = 0.013 Ohms October 1998 3 Rev 1.300 |
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