BYV79EB datasheet(2/7 Pages) PHILIPS

2 / 7 page

Philips Semiconductors

Product specification

Rectifier diodes

BYV79EB series

ultrafast, rugged

THERMAL RESISTANCES

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

th j-mb

Thermal resistance junction to

K/W

mounting base

th j-a

Thermal resistance junction to

minimum footprint, FR4 board

K/W

ambient

ELECTRICAL CHARACTERISTICS

j = 25 ˚C unless otherwise stated

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Forward voltage

F = 14 A; Tj = 150˚C

0.83

0.90

F = 14 A

0.95

1.05

F = 50 A

1.2

1.4

Reverse current

R = VRRM; Tj = 100 ˚C

0.5

1.3

R = VRRM

-5

µA

Reverse recovery charge

F = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs-

rr1

Reverse recovery time

F = 1 A; VR ≥ 30 V;

-dI

F/dt = 100 A/µs

rr2

Reverse recovery time

F = 0.5 A to IR = 1 A; Irec = 0.25 A

Forward recovery voltage

F = 1 A; dIF/dt = 10 A/µs-

July 1998

Rev 1.100

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