Philips Semiconductors

Product specification

Rectifier diodes

BYV79EB series

ultrafast, rugged

Fig.7. Maximum t

Fig.8. Maximum I

Fig.9. Typical and maximum forward characteristic

I

Fig.10. Maximum Q

Fig.11. Transient thermal impedance; Z

1

10

trr / ns

1

10

100

1000

dIF/dt (A/us)

IF=1A

IF=10A

100

1.0

10

100

Qs / nC

1.0

10

100

-dIF/dt (A/us)

1000

IF=10A

5A

2A

10

1

0.1

0.01

Irrm / A

1

10

100

-dIF/dt (A/us)

IF=10A

IF=2A

1us

10us

100us

1ms

10ms

100ms

1s

10s

0.001

0.01

0.1

1

10

BYV79E

pulse width, tp (s)

Transient thermal impedance, Zth j-mb (K/W)

D =

T

T

P

t

D

0

2

60

50

40

30

20

10

0

max

typ

Tj = 150 C

Tj = 25 C

1.0

0.5

IF / A

VF / V

1.5

July 1998

4

Rev 1.100