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ISCF8009 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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ISCF8009 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 8 page ![]() ISCF8009 eq C3M0032120K SiC N-Channel MOSFET www.iscsemi.com 2 THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.45 ℃ /W ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0V; ID= 0.1mA 1200 -- -- V VGS(th) Gate Threshold Voltage VDS = 10V; ID = 11.5mA 1.8 2.5 3.6 V VGS(th) Gate Threshold Voltage VDS = 10V; ID =11.5mA; TJ=175℃ -- 2.0 -- V RDS(ON) Drain-Source On-stage Resistance VGS= 15V; ID=40A 23 32 43 mΩ RDS(ON) Drain-Source On-stage Resistance VGS= 15V; ID=40A;TJ=175℃ -- 57.6 -- mΩ IGSS Gate Source Leakage Current VGS= 15V; VDS= 0V -- 10 250 nA IDSS Zero Gate Voltage Drain Current VDS = 1200V; VGS = 0V -- 1 50 μA RG Internal Gate Resistance f = 1 MHz, VAC = 25 mV -- 1.7 -- Ω gfS Transconductance VDS = 20V; ID=40A -- 27 -- S gfS Transconductance VDS = 20V; ID=40A;TJ=175℃ -- 22 -- S Ciss Input Capacitance VGS = 0V, VDS = 1000V, f = 100kHz VAC=25mV -- 2370 -- pF Coss Output Capacitance -- 117 -- Crss Reverse Transfer Capacitance -- 17 -- Qg Total Gate Charge VDD=800V, ID= 30A, VGS= - 4to +15V -- 169 -- nC Qgs Gate-Source Charge -- 9 -- Qgd Gate-Drain Charge -- 49 -- |
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