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ISCF8009 数据表(PDF) 3 Page - Inchange Semiconductor Company Limited |
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ISCF8009 数据表(HTML) 3 Page - Inchange Semiconductor Company Limited |
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3 / 8 page ![]() ISCF8009 eq C3M0032120K SiC N-Channel MOSFET www.iscsemi.com 3 td(on) Turn-on Delay Time VGS= - 4to +15V ID= 30A, VDS=800V, Rg=2.5Ω, inductive load -- 44 -- ns tr Turn-on Rise Time -- 120 -- td(off) Turn-off Delay Time -- 125 -- tf Turn-off Fall Time -- 140 -- EON Turn-On Switching Energy (SiC Diode FWD) VGS= - 4to +15V ID= 40A, VDS=800V, Rg=2.5Ω -- 367 -- uJ EOFF Turn Off Switching Energy (SiC Diode FWD) -- 123 -- EON Turn-On Switching Energy (Body Diode FWD) VGS= - 4to +15V ID= 40A, VDS=800V, Rg=2.5Ω -- 955 -- EOFF Turn Off Switching Energy (Body Diode FWD) -- 107 -- SOURCE-DRAIN BODY DIODE CHARACTERISTICS Drain - Source Body Diode Characteristics VSD Diode Forward Voltage ISD= 20A; VGS= -4V -- 4.6 -- V VSD Diode Forward Voltage ISD= 20A; VGS= -4V;TJ=175℃ -- 4.2 -- V IS Diode pulse Current VGS= -4V -- -- 62 A trr Reverse Recovery Time VGS = -4 V, ISD = 40 A, VR = 800V dif/dt=2250 A/µs TJ=175℃ -- 27 -- ns Qrr Reverse Recovery Charge -- 478 -- uC Irrm Peak Reverse Recovery Current -- 27 -- A |
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