PJ99 datasheet(1/2 Pages) INTERFET

部件名	PJ99

功能描述	Silicon Junction Field-Effect Transistor

PDF	2 Pages

Scroll/Zoom	100%

制造商	INTERFET [InterFET Corporation]

网页	http://www.interfet.com

标志

1 / 2 page

F-30

01/99

PJ99 Process

Silicon Junction Field-Effect Transistor

¥ General Purpose Amplifier

¥ Analog Switch

Absolute maximum ratings at TA = 25¡C

Gate Current, Ig

10 mA

Operating Junction Temperature, Tj

+150°C

Storage Temperature, Ts

– 65°C to +175°C

Devices in this Databook based on the PJ99 Process.

Datasheet

2N3993, 2N3993A

2N3994, 2N3994A

2N5114, 2N5115

2N5116

2SJ44

IFN5114, IFN5115

IFN5116

Datasheet

IFP44

J174, J175

J176, J177

P1086, P1087

VCR3P

At 25°C free air temperature:

PJ99 Process

Static Electrical Characteristics

Min

Typ

Max

Unit

Test Conditions

Gate Source Breakdown Voltage

V(BR)GSS

30

40

V

IG = 1 µA, VDS = ØV

Reverse Gate Leakage Current

IGSS

0.5

1

nA

VGS = 20V, VDS = ØV

Drain Saturation Current (Pulsed)

IDSS

– 5

– 60

mA

VDS = – 15V, VGS = ØV

Gate Source Cutoff Voltage

VGS(OFF)

18

V

VDS = – 15V, ID = 1 nA

Dynamic Electrical Characteristics

Drain Source ON Resistance

rds(on)

75

Ω

ID = 1 mA, VGS = ØV

f = 1 kHz

Forward Transconductance

gfs

15

mS

VDS = – 15V, VGS = ØV

f = 1 kHz

Input Capacitance

Ciss

18

pF

VDS = 15V, VGS = ØV

f = 1 MHz

Feedback Capacitance

Ciss

4.5

pF

VDS = ØV, VGS = 10V

f = 1 MHz

Equivalent Noise Voltage

¯eN

8

nV/

√HZ V

DS = – 10 V, VGS = Ø V

f = 1 kHz

Turn On Delay Time

td(on)

5ns

Rise Time

tr

10

ns

VDD = – 10V, ID(ON) = – 15 mA

Turn Off Delay Time

td(off)

6ns

RL = 580 Ω, VGS(ON) = ØV

Fall Time

tf

5ns

VGS(OFF) = 12V

1000 N. Shiloh Road, Garland, TX 75042

(972) 487-1287 FAX (972) 276-3375

www.interfet.com

G

S-D

Die Size = 0.021" X 0.021"

All Bond Pads = 0.004" Sq.

Substrate is also Gate.

Databook.fxp

1/13/99 2:09 PM

Page F-30

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