01/99

F-31

PJ99 Process

Silicon Junction Field-Effect Transistor

Gate Source Voltage in Volts

Input Capacitance as a Function of VGS

– 25

– 20

– 15

– 10

– 5

Drain to Source Voltage in Volts

0

– 5

– 10

– 15

– 20

Drain Current as a Function of VDS

0.1

1

10

20

VDS = Ø V

24

16

8

VGS = 2.0 V

VGS = 1.5 V

VGS = 1.0 V

VGS = 0.5 V

VGS = Ø V

VGS(OFF) = Ð2.4 V

Gate Source Cutoff Voltage in Volts

0

2468

10

Drain Saturation Current as a Function of VGS(OFF)

– 80

– 60

– 40

– 20

Drain Saturation Current in mA

0

– 20

– 40

– 60

– 80

– 100

IDSS as a Function of RDS

125

100

75

25

50

Gate Source Cutoff Voltage in Volts

0

2468

10

Gfs as a Function of VGS(OFF)

25

20

15

10

VDS = – 10 V

Gate Source Voltage in Volts

Feedback Capacitance as a Function of VGS

0.1

1

10

20

VDS = Ø V

12

8

4

VDS = – 10 V

Databook.fxp

1/13/99 2:09 PM

Page F-31