UT6402L-AG6-R datasheet(1/9 Pages) VBSEMI

部件名	UT6402L-AG6-R

功能描述	Dual N-Channel 20 V (D-S) MOSFET

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制造商	VBSEMI [VBsemi Electronics Co.,Ltd]

网页	www.VBsemi.com

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1

Dual N-Channel

20 V (D-S) MOSFET

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)

ID (A)

a

Qg (Typ.)

20

0.0

22 at V

GS = 4.5 V

1.8 nC

0.0

28 at V

GS = 2.5 V

5.0

TSOP-6

Top View

6

4

1

2

3

5

2.85 mm

3 mm

D2

G2

S1

S2

D1

G1

N-Channel MOSFET

G1

D1

S1

N-Channel MOSFET

G2

D2

S2

Notes:

a. TC = 25 °C.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. Maximum under steady state conditions is 150 °C/W.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

20

V

Gate-Source Voltage

VGS

±

12

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

.

A

TC = 70 °C

4.0

TA = 25 °C

3.5b, c

TA = 70 °C

2.8b, c

Pulsed Drain Current

IDM

18

Continuous Source-Drain Diode Current

TC = 25 °C

IS

1.17

TA = 25 °C

0.95b, c

Maximum Power Dissipation

TC = 25 °C

PD

1.6

W

TC = 70 °C

1.0

TA = 25 °C

1.14b, c

TA = 70 °C

0.73b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)d, e

260

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambientb, d

t

≤ 5 s

RthJA

93

110

°C/W

Maximum Junction-to-Foot

Steady State

RthJF

75

90

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

•

TrenchFET® Power MOSFET

•

100 % Rg Tested

• Compliant to RoHS Directive 2002/95/EC

D

UT6402L-AG6-R

www.VBsemi.com

6

.0

6 0

服务热线：400-655-8788

类似零件编号 - UT6402L-AG6-R

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