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UT6402L-AG6-R 数据表(PDF) 3 Page - VBsemi Electronics Co.,Ltd

部件名 UT6402L-AG6-R
功能描述  Dual N-Channel 20 V (D-S) MOSFET
PDF  9 Pages
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制造商  VBSEMI [VBsemi Electronics Co.,Ltd]
网页  www.VBsemi.com
标志 VBSEMI - VBsemi Electronics Co.,Ltd

UT6402L-AG6-R 数据表(HTML) 3 Page - VBsemi Electronics Co.,Ltd

  UT6402L-AG6-R Datasheet HTML 1Page - VBsemi Electronics Co.,Ltd UT6402L-AG6-R Datasheet HTML 2Page - VBsemi Electronics Co.,Ltd UT6402L-AG6-R Datasheet HTML 3Page - VBsemi Electronics Co.,Ltd UT6402L-AG6-R Datasheet HTML 4Page - VBsemi Electronics Co.,Ltd UT6402L-AG6-R Datasheet HTML 5Page - VBsemi Electronics Co.,Ltd UT6402L-AG6-R Datasheet HTML 6Page - VBsemi Electronics Co.,Ltd UT6402L-AG6-R Datasheet HTML 7Page - VBsemi Electronics Co.,Ltd UT6402L-AG6-R Datasheet HTML 8Page - VBsemi Electronics Co.,Ltd UT6402L-AG6-R Datasheet HTML 9Page - VBsemi Electronics Co.,Ltd  
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3
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
0
3
6
9
12
15
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VGS =8Vt hru3V
VGS =2V
VGS =1V
VDS - Drain-to-Source Voltage (V)
0.00
0
3
6
9
12
15
VGS =
V
VGS =
V
ID - Drain Current (A)
0
2
4
6
8
10
012
34
VDS =14V
ID =3.4 A
VDS = 6V
VDS =10V
Qg - Total Gate Charge (nC)
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
1
2
3
4
5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
TC = 25 °C
TC = 125 °C
TC = - 55 °C
VGS - Gate-to-Source Voltage (V)
Crss
0
100
200
300
400
500
600
0
5
10
15
20
25
30
Ciss
Coss
VDS - Drain-to-Source Voltage (V)
0.6
0.8
1.0
1.2
1.4
1.6
1.8
- 50
- 25
0
25
50
75
100
125
150
ID =3.4 A
VGS =
V , V GS =4.5 V
TJ - Junction Temperature (°C)
UT6402L-AG6-R
www.VBsemi.com
2.5
2.5
4.5
0.030
0.020
0.010
0.040
0.050
服务热线：400-655-8788



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