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J108 数据表(PDF) 2 Page - NXP Semiconductors

部件名 J108
功能描述  N-channel silicon junction FETs
PDF  7 Pages
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制造商  PHILIPS [NXP Semiconductors]
网页  http://www.nxp.com
标志 PHILIPS - NXP Semiconductors

J108 数据表(HTML) 2 Page - NXP Semiconductors

  J108 Datasheet HTML 1Page - NXP Semiconductors J108 Datasheet HTML 2Page - NXP Semiconductors J108 Datasheet HTML 3Page - NXP Semiconductors J108 Datasheet HTML 4Page - NXP Semiconductors J108 Datasheet HTML 5Page - NXP Semiconductors J108 Datasheet HTML 6Page - NXP Semiconductors J108 Datasheet HTML 7Page - NXP Semiconductors  
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1996 Jul 30
2
Philips Semiconductors
Product specification
N-channel silicon junction FETs
J108; J109; J110
FEATURES
• High speed switching
• Interchangeability of drain and source connections
• Low RDSon at zero gate voltage (<8 Ω for J108).
APPLICATIONS
• Analog switches
• Choppers and commutators.
DESCRIPTION
N-channel symmetrical silicon junction field-effect
transistors in a TO-92 package.
CAUTION
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
PINNING - TO-92
PIN
SYMBOL
DESCRIPTION
1
g
gate
2
s
source
3
d
drain
Fig.1 Simplified outline and symbol.
handbook, halfpage
1
3
2
MAM197
s
d
g
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage
−±25
V
VGSoff
gate-source cut-off voltage
ID =1 µA; VDS =5V
J108
−3
−10
V
J109
−2
−6V
J110
−0.5
−4V
IDSS
drain current
VGS = 0; VDS =5V
J108
80
mA
J109
40
mA
J110
10
mA
Ptot
total power dissipation
up to Tamb =50 °C
400
mW



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